Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array
Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array
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使用器件矩阵阵列直接测量 SRAM 噪声容限与单个单元晶体管变异性之间的相关性
DOI：
10.1109/ted.2011.2138142
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发表时间：
2011
影响因子：
3.1
通讯作者：
Tohru Mogami
中科院分区：
文献类型：
--
作者：
Toshiro Hiramoto;Makoto Suzuki;Xiaowei Song;Ken Shimizu;T. Saraya;A. Nishida;T. Tsunomura;Shiro Kamohara;Kiyoshi Takeuchi;Tohru Mogami
利用由16kb静态随机存取存储器(SRAM)单元组成的特殊器件-矩阵-阵列测试元件组，直接测量了静态随机存取存储器(SRAM)单元中六个单元晶体管的噪声裕度、特性及其变异性，并分析了SRAM噪声裕度与单元晶体管变异性之间的相关性。研究发现，每个单元的静态噪声容限(SNM)与电源电压Vdd的关系非常不同，这种分散的SNM依赖关系不能仅用测量的阈值电压Vth变异性来解释，这表明只考虑Vth变异性的电路模拟不能准确地预测SRAM在低电源电压下的稳定性。
Noise margin, characteristics of six individual cell transistors, and their variability in static random-access memory (SRAM) cells are directly measured using a special device-matrix-array test element group of 16-kb SRAM cells, and the correlation between the SRAM noise margin and the cell transistor variability is analyzed. It is found that each cell shows a very different supply voltage Vdd dependence of the static noise margin (SNM), and this scattered Vdd dependence of the SNM is not explained by the measured threshold voltage Vth variability alone, indicating that the circuit simulation taking only the Vth variability into account will not predict the SRAM stability precisely at low supply voltage.