In-situ observation of stacking fault evolution in vacuum-deposited C60
In-situ observation of stacking fault evolution in vacuum-deposited C60
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DOI：
10.1063/1.4995571
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发表时间：
2017-12-04
影响因子：
4
通讯作者：
Riede, M.
中科院分区：
文献类型：
--
作者：
Hardigree, J. F. M.;Ramirez, I. R.;Riede, M.
本文报道了利用掠入射x射线散射对C-60薄膜层错演化的原位研究。Williamson-Hall对15nm薄膜在玻璃上生长过程中的主要散射特征进行了分析，结果表明，在薄膜的前5nm，晶格应变高达6%，超过8nm厚度后，晶格应变下降至2%。发现沿{220}面发生变形层错的概率为68%，并与纳米晶粉状膜的形成密切相关。我们的发现捕获了单层分辨率的生长，与之前在晶体和粉末C-60薄膜上的工作一致，并为有机半导体薄膜的实时研究提供了晶体学背景。(C) 2017作者：
We report an in-situ study of stacking fault evolution in C-60 thin films using grazing-incidence x-ray scattering. A Williamson-Hall analysis of the main scattering features during growth of a 15nm film on glass indicates lattice strain as high as 6% in the first 5 nm of the film, with a decrease to 2% beyond 8 nm thickness. Deformation stacking faults along the {220} plane are found to occur with 68% probability and closely linked to the formation of a nanocrystalline powder-like film. Our findings, which capture monolayer-resolution growth, are consistent with previous work on crystalline and powder C-60 films, and provide a crystallographic context for the real-time study of organic semiconductor thin films. (C) 2017 Author(s).