250‐Å linewidths with PMMA electron resist
250‐Å linewidths with PMMA electron resist
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250-Å 线宽，带 PMMA 电子抗蚀剂
DOI：
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发表时间：
1978
期刊：
影响因子：
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通讯作者：
W. Molzen
中科院分区：
文献类型：
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作者：
A. Broers;J. Harper;W. Molzen
使用电子束曝光和聚甲基丙烯酸甲酯（PMMA）抗蚀剂在22.5 nm厚的PdAu（40：60）膜中制造了25 nm宽的线和空间。使用高分辨率扫描透射电子显微镜（STEM）曝光抗蚀剂，并将样品安装在60 nm厚的Si3N4膜基底上。以前，用抗蚀剂工艺形成的最小金属结构是60 nm宽，线之间的间隔比线大几倍。这里给出的结果表明，可以制造中心间距为50 nm的25 nm线。
25‐nm‐wide lines and spaces have been fabricated in 22.5‐nm‐thick films of PdAu (40 : 60) using electron‐beam exposure and polymethylmethacrylate (PMMA) resist. A high‐resolution scanning transmission electron microscopy (STEM) was used to expose the resist and the samples were mounted on 60‐nm‐thick Si3N4 membrane substrates. Previously, the smallest metal structures formed with a resist process were 60 nm wide with spaces between the lines several times larger than the lines. The results presented here show that 25‐nm lines can be fabricated with a center to center spacing of 50 nm.