Degradation and recovery of In/sub 0.53/Ga/sub 0.47/As photodiodes by 1-MeV fast neutrons
Degradation and recovery of In/sub 0.53/Ga/sub 0.47/As photodiodes by 1-MeV fast neutrons
复制标题
1-MeV 快中子对 In/sub 0.53/Ga/sub 0.47/As 光电二极管的降解和恢复
DOI：
10.1109/23.556900
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发表时间：
1996
影响因子：
1.8
通讯作者：
H. Sunaga
中科院分区：
文献类型：
--
作者：
H. Ohyama;J. Vanhellemont;Y. Takami;K. Hayama;T. Kudou;T. Hakata;S. Kohiki;H. Sunaga
本文首次研究了1 MeV快中子辐照In/sub 0.53/Ga/sub 0.47/As p-i-n光电二极管的辐照损伤与注量的关系。二极管的电学和光学性能的退化随着注量的增加而增加。用DLTS方法研究了In/sub 0.53/Ga/sub 0.47/As外延层和InP衬底中的感生晶格缺陷。在In/sub 0.53/Ga/sub 0.47/As外延层中，空穴和电子捕获能级由辐照诱导。辐射源对器件退化的影响进行了讨论，通过比较1-MeV的电子相对于撞击原子的数量和非电离能量损失（NIEL）。为了检查恢复行为，在75至300/spl deg/C的温度范围内进行等时热退火。在300/spl ℃热退火后，当能量密度为1/spl × 10/sup 13/cm/sup 2/时，光电流仅恢复到辐照前的20%，而当能量密度为1/spl × 10/sup 15/cm/sup 2/时，光电流恢复到辐照前的53%。不同的恢复行为被认为是由于不同类型的辐射损伤。
Irradiation damage in In/sub 0.53/Ga/sub 0.47/As p-i-n photodiodes by 1-MeV fast neutrons is studied as a function of fluence for the first time. The degradation of the electrical and optical performance of diodes increases with increasing fluence. The induced lattice defects in the In/sub 0.53/Ga/sub 0.47/As epitaxial layers and the InP substrate are studied by DLTS methods. In the In/sub 0.53/Ga/sub 0.47/As epitaxial layers, hole and electron capture levels are induced by irradiation. The influence of radiation source on device degradation is then discussed by comparison to 1-MeV electrons with respect to the numbers of knock-on atoms and the nonionizing energy loss (NIEL). In order to examine the recovery behavior, isochronal thermal annealing is carried out for temperatures ranging from 75 to 300/spl deg/C. After 300/spl deg/C thermal annealing, the light current only recovers to 20% of pre-irradiation for a fluence of 1/spl times/10/sup 13/ n/cm/sup 2/, while it recovers to 53% for a fluence of 1/spl times/10/sup 15/ e/cm/sup 2/. The different of recovery behavior is thought to be due a different type of radiation damage.