Photoluminescence of InGaN/GaN multiple quantum wells originating from complete phase separation
Photoluminescence of InGaN/GaN multiple quantum wells originating from complete phase separation
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DOI：
10.1063/1.1540738
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发表时间：
2003-03-01
影响因子：
3.2
通讯作者：
Miao, ZL
中科院分区：
文献类型：
--
作者：
Chen, P;Chua, SJ;Miao, ZL
研究了用金属有机化学气相沉积法生长的InGaN/GaN多量子威尔斯阱（MQW）的光致发光（PL）谱。使用两种不同的蓝宝石衬底，精确的c平面和向a平面偏移2度的c平面。MQW样品在相同条件下生长。在离轴衬底上观察到PL峰位置向较长波长的偏移。在所有温度下，生长在同轴衬底上的InGaN/GaN多量子阱的PL谱均呈现双峰结构，而生长在离轴衬底上的多量子阱的PL谱均呈现单峰结构。随着激发功率密度的增加，离轴衬底上的蓝移增大。基于InGaN多量子阱中的分凝效应对实验结果进行了讨论。离轴衬底上的高In组分区域在辐射复合过程中起着重要作用。(C)2003年，美国物理学会。
The photoluminescence (PL) spectra of InGaN/GaN multiples quantum wells (MQWs) grown by metalorganic chemical vapor deposition were investigated by varying the PL temperature and excitation power density. Two different sapphire substrates, an exact c-plane and a c-plane with a 2degrees offset towards the a-plane, were used. The MQW samples were grown under the same conditions. A shift of the PL peak position to a longer wavelength was observed on the off-axis substrate. At all temperatures, the PL spectra from InGaN/GaN MQWs grown on the on-axis substrate showed a double-peak structure, while those from the MQWs grown on the off-axis substrate showed a single-peak structure. With increasing excitation power density, a larger blueshift was found on the off-axis substrate. These experimental results were discussed based on the segregation effect in InGaN MQWs. The high In composition regions on the off-axis substrate play an important role in the radiative recombination process. (C) 2003 American Institute of Physics.