Investigation of Loading Effect on Power Performance for Planar Gunn Diodes Using Load-Pull Measurement Technique
Investigation of Loading Effect on Power Performance for Planar Gunn Diodes Using Load-Pull Measurement Technique
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DOI：
10.1109/lmwc.2011.2163496
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发表时间：
2011-08
影响因子：
3
通讯作者：
Chong Li;L. B. Lok;A. Khalid;I. Thayne;D. Cumming
中科院分区：
文献类型：
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作者：
Chong Li;L. B. Lok;A. Khalid;I. Thayne;D. Cumming
为了研究加载对工作在102 GHz渡越时间模式下的平面古恩二极管射频功率性能的影响，进行了单端口负载牵引测量。在波导混频器和晶片探针之间使用W波段手动E-H调谐器来改变古恩二极管上的负载阻抗。已经发现，通过系统地调节调谐器，可以获得大于25 dB的输出功率变化。通过对探测器、调谐器和混频器的S参数进行去嵌入，推导出了平面古恩二极管的射频功率与负载阻抗的关系。该方法对于辅助设计匹配网络以提高单口振荡器的输出功率是非常有用的。
A one-port load-pull measurement has been carried out in order to investigate the effect of loading on the RF power performance of a planar Gunn diode operating in the transit-time mode at 102 GHz. A W-band manual E-H tuner was applied between a waveguide mixer and a wafer probe to vary the load impedance on the Gunn diode. It has been found that more than 25 dB variation of output power was obtained by systematically adjusting the tuner. By de-embedding the S-parameters of the probe, E-H tuner and mixer, the relationship between RF power and load impedance for the planar Gunn diode was derived. This method is extremely useful for assisting the design of matching networks to improve power output of one-port oscillator devices.