High-temperature electron transport in metamorphic InGaAs/InAlAs heterostructures
High-temperature electron transport in metamorphic InGaAs/InAlAs heterostructures
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变质 InGaAs/InAlAs 异质结构中的高温电子传输
DOI：
10.1016/j.stam.2005.02.024
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发表时间：
2005
影响因子：
5.5
通讯作者：
Satoshi Taniguchi
中科院分区：
文献类型：
--
作者：
Toshi;Hideki Ono;Satoshi Taniguchi
研究了不同In含量的InGaAs/InAlAs调制掺杂异质结中的高温电子输运。表征低场输运性质的电子迁移率由霍尔测量获得。从室温到400 K，迁移率下降了约26%，这可以用极化光学声子散射理论很好地解释。用Γ-谷电子质量理论解释了迁移率与铟含量的关系。另一方面，通过对栅长为0.12-1.0 μm的晶体管的延迟时间分析，研究了表征高场输运特性的电子饱和速度。我们观察到从室温到400 K，饱和速度下降约12%，这小于迁移率，大致符合能量弛豫理论。在铟含量的饱和速度的依赖性，在L-和X-谷的电子密度降低的效果是重要的。晶体管在高温下的高频性能随着饱和速度的降低而劣化。
We have investigated high-temperature electron transport in metamorphic InGaAs/InAlAs modulation-doped heterostructures with several indium contents. The electron mobility characterizing the low-field transport properties was obtained from the Hall measurements. From room temperature to 400 K, ~26% decrease in the mobility was observed, which is well-explained by the polar-optical-phonon scattering theory. The indium content dependence of the mobility is explained by the theory with the Γ-valley electron mass. On the other hand, the electron saturation velocity characterizing the high-field transport properties was studied by means of the delay-time analysis of the transistors with gate length of 0.12–1.0 µm. We observed ~12% decrease in the saturation velocity from room temperature to 400 K, which is smaller than that in the mobility and roughly consistent with the energy relaxation theory. In the indium content dependence of the saturation velocity, the effect of decrease in the electron density in the L- and X-valley is important. The high-frequency performance of the transistors at high temperatures shows a deterioration according to the decrease in the saturation velocity.