Exposure characteristics of cobalt fluoride (CoF2) self-developing electron-beam resist on sub-100 nm scale
Exposure characteristics of cobalt fluoride (CoF2) self-developing electron-beam resist on sub-100 nm scale
复制标题
氟化钴（CoF2）自显影电子束光刻胶在亚100 nm尺度下的曝光特性
DOI：
10.1063/1.1487914
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发表时间：
2002
影响因子：
3.2
通讯作者：
R. Egerton
中科院分区：
文献类型：
--
作者：
M. Malac;M. Schoefield;Yimei Zhu;R. Egerton
我们研究了电子束曝光的氟化钴（CoF 2）薄膜的实时高分辨率透射电子显微镜和电子能量损失谱。我们能够从辐照区域完全去除氟，并通过在低剂量率和高温下暴露该区域来保留金属钴。该结构由尺寸在5-10 nm量级的分离的单晶钴纳米颗粒组成。
We have studied electron-beam exposure of cobalt fluoride (CoF2) thin films by real-time high-resolution transmission electron microscopy and by electron energy-loss spectroscopy. We were able to remove fluorine completely from an irradiated area and retain metallic cobalt by exposing the area at low dose rate and elevated temperature. The structures were composed of separated single-crystal cobalt nanoparticles with dimensions on the order of 5–10 nm.