Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11(2)over-bar2} microfacets -: art. no. 231901
Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11(2)over-bar2} microfacets -: art. no. 231901
复制标题
DOI：
10.1063/1.2136226
复制
发表时间：
2005-12-05
影响因子：
4
通讯作者：
Mukai, T
中科院分区：
文献类型：
--
作者：
Nishizuka, K;Funato, M;Mukai, T
采用条形GaN模板上的再生生长技术，在几个微米宽的{11(2)面上实现了InxGa1-xN单量子阱的彩虹色发光，并且几乎覆盖了整个可见光区。这些面相对于(0001)面倾斜56，并且使(0001)和{11(2)位于Bar0}面上。由于In组分的变化，在Bar2}面上的{11(2)面上的发射波长从Bar0}面上的{11(2)面红移到(0001)面上，导致了与彩虹几何形状的颜色对比。光致发光强度对温度的依赖关系表明，与传统的(0001)InxGa1-xN量子阱相比，由于内部电场很小，穿线位错密度很小，室温下的内量子效率为33%。由于发射效率不表现出明显的发射波长依赖性，因此这种类型的结构具有作为执行诸如粉色和白色等多种颜色可控性的多波长发光器件的潜力。(C)2005年美国物理研究所。
Rainbow color luminescence from InxGa1-xN single quantum wells (SQWs) is achieved and almost covers the entire visible range when the layers are fabricated on {11 (2) over bar2) facets with a few micron-width using a regrowth technique on striped GaN templates. These facets are tilted 56 with respect to the (0001) facets and border the (0001) and {11 (2) over bar0} facets. The emission wavelength on the {11 (2) over bar2} facets is redshifted from the {11 (2) over bar0} side to (0001) side due to the variations of the In composition, which leads to the color contrast with the rainbow geometry. The temperature dependence of the photoluminescence intensity shows that the internal quantum efficiency at room temperature is 33% due to the very small internal electric fields and a small threading dislocation density compared to that in conventional (0001) InxGa1-xN SQWs. Since the emission efficiency does not show a noticeable emission wavelength dependence, this type of structure has potential as light-emitting devices with multiwavelengths that perform numerous color controllability such as pastel and white colors. (c) 2005 American Institute of Physics.