Nanofluidic diode and bipolar transistor
Nanofluidic diode and bipolar transistor
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DOI：
10.1021/nl051646y
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发表时间：
2005-11-01
期刊：
影响因子：
10.8
通讯作者：
Shirono, K
中科院分区：
文献类型：
--
作者：
Daiguji, H;Oka, Y;Shirono, K
对具有表面电荷的纳米沟道中离子分布和输运的理论模拟表明，即使双电层不重叠，也可以通过局部改变栅电极的表面电荷密度来控制离子电流。当通道左右半部分的表面电荷密度绝对值相同但符号不同时，这可以形成纳米流体二极管的基础。当沟道中间部分的表面电荷密度被改变时，这可以形成纳米流体双极晶体管的基础。
Theoretical modeling of ionic distribution and transport in a nanochannel containing a surface charge on its wall, 30 nm high and 5 mu m long, suggests that ionic current can be controlled by locally modifying the surface charge density through a gate electrode, even if the electrical double layers are not overlapped. When the surface charge densities at the right and left halves of a channel are the same absolute value but of different signs, this could form the basis of a nanofluidic diode. When the surface charge density at the middle part of a channel is modified, this could form the basis of a nanofluidic bipolar transistor.