Experimental Observation of Temperature and Pressure Induced Frequency Fluctuations in Silicon MEMS Resonators
Experimental Observation of Temperature and Pressure Induced Frequency Fluctuations in Silicon MEMS Resonators
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DOI：
10.1109/jmems.2021.3077633
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发表时间：
2021-08-01
影响因子：
2.7
通讯作者：
Seshia, Ashwin A.
中科院分区：
文献类型：
--
作者：
Pandit, Milind;Mustafazade, Arif;Seshia, Ashwin A.
硅MEMS谐振器越来越多地被应用于定时和频率控制以及精密传感。众所周知，性能的关键限制与对环境变量（如温度和压力）的敏感性有关。因此，已经引入了解决这些因素的技术方法，例如温度控制系统中的谐振器的真空密封和烘箱化。然而，对这种效应的残余敏感性仍然可以作为精密器件中频率波动和漂移的重要来源。这是实验证明，在本文中的精密烘箱控制和真空密封的硅谐振器。使用两个单独的几乎相同的共同位于同一芯片上的谐振器构造的振荡器的频率波动进行了分析和差分频率波动进行检查，作为一种手段，减少共模效应，如温度和压力的影响。对于这种配置，我们的结果表明，谐振器之间的温度和压力系数的失配最终限制了频率稳定性。
Silicon MEMS resonators are increasingly being adopted for applications in timing and frequency control, as well as precision sensing. It is well established that a key limitation to performance is associated with sensitivity to environmental variables such as temperature and pressure. As a result, technical approaches to address these factors such as vacuum sealing and ovenization of the resonators in a temperature controlled system have been introduced. However, residual sensitivity to such effects can still serve as a significant source of frequency fluctuations and drift in precision devices. This is experimentally demonstrated in this paper for a precision oven-controlled and vacuum-sealed silicon resonators. The frequency fluctuations of oscillators constructed using two separate nearly-identical co-located resonators on the same chip are analysed and differential frequency fluctuations are examined as a means of reducing the impact of common-mode effects such as temperature and pressure. For this configuration, our results show that the mismatch of temperature and pressure coefficients between the resonators ultimately limits the frequency stability.