Process window OPC for reduced process variability and enhanced yield
Process window OPC for reduced process variability and enhanced yield
复制标题
工艺窗口 OPC 可减少工艺变异性并提高产量
DOI：
10.1117/12.656835
复制
发表时间：
2006
期刊：
影响因子：
--
通讯作者：
H. Maaty
中科院分区：
文献类型：
--
作者：
A. Krasnoperova;J. Culp;Ioana Graur;S. Mansfield;M. Al;H. Maaty
As the industry moves toward 45nm technology node and beyond, further reduction of lithographic process window is anticipated. The consequence of this is twofold: first, the manufactured chip will have pattern sizes that are different from the designed pattern sizes and those variations may become more dominated by systematic components as the process windows shrink; second, smaller process windows will lead to yield loss as, at small dimensions, lithographic process windows are often constrained by catastrophic fails such as resist collapse or trench scumming, rather than by gradual pattern size variation. With this notion, Optical Proximity Correction (OPC) for future technology generations must evolve from the current single process point OPC to algorithms that provide an OPC solution optimized for process variability and yield. In this paper, a Process Window OPC (PWOPC) concept is discussed, along with its place in the design-to-manufacturing flow. Use of additional models for process corners, integration of process fails and algorithm optimization for a production-worthy flow are described. Results are presented for 65nm metal levels.
