The Effect of Low Pressure on the Structure of LPCVD Polycrystalline Silicon Films
The Effect of Low Pressure on the Structure of LPCVD Polycrystalline Silicon Films
复制标题
低压对LPCVD多晶硅薄膜结构的影响
DOI：
10.1149/1.2100239
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发表时间：
1987
影响因子：
3.9
通讯作者：
L. Haji
中科院分区：
文献类型：
--
作者：
P. Joubert;B. Loisel;Y. Chouan;L. Haji
O C 5参考文献引用的美国专利文件4，317，844 3/1982 Carlson... 437/101其他出版物Soc.：《固体科学与技术》，1987年10月，pp. 2541-2545，“低压对LPCVD多晶硅膜结构的影响”，P. Joubert等人，初级审查员-Olik Chaudhuri助理审查员-G.律师、代理人或事务所-约翰·T。公开了一种用于形成诸如非晶硅的材料层的工艺。当使用诸如硅烷的前体气体来形成非晶硅时，硅晶体通常形成在非晶硅层的顶部上。在沉积循环结束时，通过在反应器中存在低压硅烷来产生晶体。通过在硅烷流终止之前降低温度来抑制晶体的形成。
O C 5 References Cited U.S. PATENT DOCUMENTS 4,317,844 3/1982 Carlson ............................... 437/101 OTHER PUBLICATIONS J. Electrochem. Soc.: Solid State Science and Technol ogy, Oct. 1987, pp. 2541-2545, "The Effect of Low Pressure on the Structure of LPCVD Polycrystalline Silicon Films,' P. Joubert et al. Primary Examiner-Olik Chaudhuri Assistant Examiner-G. Fourson Attorney, Agent, or Firm-John T. Rehberg 57 ABSTRACT A process for the formation of material layers such as amorphous silicon is disclosed. When a precursor gas such as silane is utilized to form amorphous silicon, silicon crystals are often formed on top of the amor phous silicon layer. The crystals are created by the presence of low pressure silane in the reactor at the end of the deposition cycle. Formation of crystals is inhib ited by lowering the temperature before silane flow is terminated.