Overcoming the poor crystal quality and DC characteristics of AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistors
Overcoming the poor crystal quality and DC characteristics of AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistors
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克服AlGaN/GaN/AlGaN双异质结构高电子迁移率晶体管晶体质量和直流特性较差的问题
DOI：
10.1002/pssa.201532894
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发表时间：
2016
影响因子：
2
通讯作者：
Hao Yue
中科院分区：
文献类型：
--
作者：
Zhang Weihang;Li Xiangdong;Zhang Jincheng;Jiang Haiqing;Xu Xin;Guo Zhenxing;Jiang Renyuan;Zou Yu;He Yunlong;Hao Yue
我们报道了Al0.30Ga0.70N/GaN/Al0.07Ga0.93N双异质结构高电子迁移率晶体管（DH HEMT），其具有完全超过Al0.30Ga0.70N/GaN单异质结构（SH）HEMT的令人钦佩的DC特性。DH HEMT具有1400 nm渐变AlxGa 1-xN（x= 0-0.06）缓冲层、300 nm Al0.07Ga0.93N背势垒层和70 nm厚GaN沟道层。由于改进的晶体质量和增强的载流子约束，相对于传统的SH HEMT，所呈现的DH HEMT已经显示出改进的性能，包括电子迁移率从1701提高到1744 cm 2 V-1 s-1，根据均方根值（RMS）的表面粗糙度从0.19减小到0.16 nm，（10-12）半峰全宽（FWHMs）从726降至540 arcsec，亚阈值摆幅（SS）从113降至78 mV dec−1，离子/电离关断比（Ion/Ioffratio）从105.3增至106.2，漏致势垒降低（DIBL）从24和14 mV V−1降至14 mV V−1，击穿电压从59 V提高到109 V。
We report Al0.30Ga0.70N/GaN/Al0.07Ga0.93N double‐heterostructure high electron mobility transistors (DH HEMTs) with admirable DC characteristics fully surpassing those of the Al0.30Ga0.70N/GaN single‐heterostructure (SH) HEMTs. The DH HEMTs feature a 1400‐nm graded AlxGa1–xN (x= 0–0.06) buffer layer, a 300‐nm Al0.07Ga0.93N back barrier layer, and a 70‐nm thick GaN channel layer. Due to the improved cystal quality and enhanced confinement of the carriers, the DH HEMTs presented have shown improved performance with respect to the conventional SH HEMTs, including electron mobility promoted from 1701 to 1744 cm2V−1s−1, surface roughness in terms of root mean square values (RMS) reduced from 0.19 to 0.16 nm, (10–12) full widths at half‐maximum (FWHMs) reduced from 726 to 540 arcsec, subthreshold swing (SS) reduced from 113 to 78 mV dec−1,Ion/Ioffratio increased from 105.3to 106.2, drain‐induced barrier lowering (DIBL) reduced from 24 and 14 mV V−1, and breakdown voltage promoted from 59 to 109 V.