InP/ZnS quantum dot photoluminescence modulation via in situ H2S interface engineering.
InP/ZnS quantum dot photoluminescence modulation via in situ H2S interface engineering.
复制标题
通过原位 H2S 界面工程进行 InP/ZnS 量子点光致发光调制。
DOI：
10.1039/d2nh00436d
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发表时间：
2023
影响因子：
9.7
通讯作者：
Fan XB
中科院分区：
文献类型：
--
作者：
Fan XB
InP量子点作为一种潜在的毒性较低的镉基量子点的替代品在许多研究领域引起了人们的极大兴趣。尽管到目前为止已经报道了具有优异光致发光特性的InP基核/壳量子点，但是通常需要复杂的界面处理来消除缺陷。在此，使用氨基膦作为磷的晶种源，我们发现H2S可以在高温下由硫醇和烷基胺之间的反应有效地产生。除了一般理解H2S作为S的前体外，还揭示了通过H2S的核心蚀刻，InP和ZnS之间的界面可以通过S2−掺入来重建。这样的过渡层可以减少界面处的固有缺陷，导致显著的光致发光（PL）增强。同时，通过H2S刻蚀可以进一步控制InP核的尺寸，为获得宽带隙的InP基蓝光量子点提供了一种可行的工艺。
InP quantum dots (QDs) are attracting significant interest as a potentially less toxic alternative to Cd-based QDs in many research areas. Although InP-based core/shell QDs with excellent photoluminescence properties have been reported so far, sophisticated interface treatment to eliminate defects is often necessary. Herein, using aminophosphine as a seeding source of phosphorus, we find that H2S can be efficiently generated from the reaction between a thiol and an alkylamine at high temperatures. Apart from general comprehension that H2S acts as a S precursor, it is revealed that with core etching by H2S, the interface between InP and ZnS can be reconstructed with S2− incorporation. Such a transition layer can reduce inherent defects at the interface, resulting in significant photoluminescence (PL) enhancement. Meanwhile, the size of the InP core could be further controlled by H2S etching, which offers a feasible process to obtain wide band gap InP-based QDs with blue emission.