Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes
Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes
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DOI：
10.1007/s00340-008-3257-2
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
R. Guo;J. Nishimura;M. Matsumoto;M. Higashihata;D. Nakamura;T. Okada
中科院分区：
文献类型：
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作者：
R. Guo;J. Nishimura;M. Matsumoto;M. Higashihata;D. Nakamura;T. Okada
采用纳米粒子辅助脉冲激光沉积（NAPLD）技术在蓝宝石衬底上成功生长了垂直排列的ZnO纳米线，并将其应用于ZnO纳米线异质结结构的制备，通过制备p-GaN：Mg薄膜/ZnO纳米线/n-ZnO薄膜结构，获得了ZnO纳米线嵌入p-GaN/n-ZnO异质结发光二极管（LED）。电流-电压测量显示出典型的二极管特性，阈值电压约为2.5V。在异质结二极管的正向偏压下观察到波长约为380 nm的电致发光（EL）发射，并通过将施加电压增加到30 V来增强。
Vertically aligned ZnO nanowires were successfully grown on the sapphire substrate by nanoparticle-assisted pulsed laser deposition (NAPLD), which were employed in fabricating the ZnO nanowire-based heterojunction structures.p-GaN/n-ZnO heterojunction light-emitting diodes (LEDs) with embedded ZnO nanowires were obtained by fabricatingp-GaN:Mg film/ZnO nanowire/n-ZnO film structures. The current–voltage measurements showed a typical diode characteristic with a threshold voltage of about 2.5áV. Electroluminescence (EL) emission having the wavelength of about 380ánm was observed under forward bias in the heterojunction diodes and was intensified by increasing the applied voltage up to 30áV.