Growth and electrical properties of mercury indium telluride single crystals
Growth and electrical properties of mercury indium telluride single crystals
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DOI：
10.1016/j.materresbull.2006.12.007
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发表时间：
2007-11
影响因子：
5.4
通讯作者：
Linghang Wang;Yangchun Dong;W. Jie
中科院分区：
文献类型：
--
作者：
Linghang Wang;Yangchun Dong;W. Jie
采用垂直布里奇曼法（VB）生长了一种新型的光电子晶体碲铟汞（MIT）。研究了MIT晶体的结晶性、热性能和电学性能。X射线摇摆曲线测试结果表明，生长的MIT晶体具有良好的晶体质量，（311）面半高宽约为173in。DSC测试表明，在开放体系中，当温度高于387.9°C时，Hg元素容易从化合物中单独蒸发。室温下的霍尔测量表明，MIT晶体的电阻率、载流子密度和迁移率分别为4.79×102Ωcm、2.83×1013cm− 3和4.60×102cm2V−1s−1。载流子迁移率的降低和电阻率的增加与In2Te3的加入改变了晶体的能带结构有关。
A novel photoelectronic single crystal, mercury indium telluride (MIT), has been successfully grown by using vertical Bridgman method (VB). The crystallinity, thermal and electrical properties of the MIT crystal were investigated. The results of X-ray rocking curve show that the as-grown MIT crystal has good crystal quality with the FWHM on (311) face of about 173in. DSC measurement reveals that the Hg element is easy to solely evaporate from the compound when the temperature is higher than 387.9°C in the open system. Hall measurements at room temperature show that the resistivity, carrier density and mobility of the MIT crystal were 4.79×102Ωcm, 2.83×1013cm−3and 4.60×102cm2V−1s−1, respectively. The reduction of carrier mobility and the increase of the resistivity are related to the adding of In2Te3into HgTe, which changes the energy band structure of the crystal.