Negative quasiclassical magnetoresistance in a high density two-dimensional electron gas in aAlxGa1−xN∕GaNheterostructure
Negative quasiclassical magnetoresistance in a high density two-dimensional electron gas in aAlxGa1−xN∕GaNheterostructure
复制标题
aAlxGa1−xN∕GaN异质结构中高密度二维电子气中的负准经典磁阻
DOI：
10.1103/physrevb.71.245323
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发表时间：
2005
影响因子：
3.7
通讯作者：
J. Portal
中科院分区：
文献类型：
--
作者：
H. Cho;G. Gusev;Z. Kvon;V. Renard;Jung;J. Portal
我们研究了 AlxGa1−xN/GaN 异质结构中高密度二维电子气中与温度无关的负磁阻。这种磁阻归因于在平滑杂质势的背景下强散射体界面粗糙度的随机阵列中电子的经典渗透。通过数据与理论的比较，推导出强散射体与光滑无序导致的平均自由程之比。独立地，使用粗糙度参数测量和计算粗糙度散射。因此，负磁阻与零场迁移率和 Shubnikov-de Haas 振荡分析相结合，使我们能够获得有关 AlxGa1−xN/GaN 异质结构中长程和短程散射机制的信息。
We studied the negative temperature-independent magnetoresistance in a high-density, two-dimensional electron gas in AlxGa1−xN/GaN heterostructure. This magnetoresistance is attributed to the classical percolation of electrons in a random array of strong scatterers interface roughness on the background of the smooth impurity potential. The ratio between the mean free paths due to strong scatterers and smooth disorder was deduced from the comparison of the data and the theory. Independently, the roughness scattering has been measured and calculated using the roughness parameters. Therefore, the negative magnetoresistance in combination with the zero field mobility and Shubnikov–de Haas oscillations analysis allowed us to obtain information about long-range and short-range scattering mechanisms in AlxGa1−xN/GaN heterostructure.