Shaping single atomic junctions in ultra-thin Ag structures by electromigration
Shaping single atomic junctions in ultra-thin Ag structures by electromigration
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DOI：
10.1063/1.5040405
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发表时间：
2018-07
影响因子：
4
通讯作者：
A. Chatterjee;T. Heidenblut;F. Edler;E. Olsen;J. P. Stöckmann;C. Tegenkamp;H. Pfnür
中科院分区：
文献类型：
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作者：
A. Chatterjee;T. Heidenblut;F. Edler;E. Olsen;J. P. Stöckmann;C. Tegenkamp;H. Pfnür
通过用电迁移表征和操纵单银纳米晶界的导电特性——最初被认为是对金属纳米结构的有害影响——我们表明，在沉积在氢端低掺杂Si（100）样品上的超薄（5纳米）和超小（最小宽度16纳米）银纳米结构中，原子点接触可以在明确的位置产生，并且具有极高的可靠性。当结构的最小收缩小于银膜的平均晶粒尺寸时，总是获得单接触，并且抑制了竞争热迁移。这些超薄和横向开放的硅结构为分子结的局部表征提供了完全的可及性。通过用电迁移表征和操纵单银纳米晶界的导电特性——最初被认为是对金属纳米结构的有害影响——我们表明，在沉积在氢端低掺杂Si（100）样品上的超薄（5纳米）和超小（最小宽度16纳米）银纳米结构中，原子点接触可以在明确的位置产生，并且具有极高的可靠性。当结构的最小收缩小于银膜的平均晶粒尺寸时，总是获得单接触，并且抑制了竞争热迁移。这些超薄和横向开放的硅结构为分子结的局部表征提供了完全的可及性。
By characterizing and manipulating the conductive properties of single Ag nano-grain boundaries with electromigration—originally considered only as a detrimental effect for metallic nanostructures—we show that atomic point contacts can be generated at well-defined locations with extreme reliability in ultra-thin (5 nm) and ultra-small (minimum width 16 nm) Ag nanostructures, deposited on hydrogen terminated low-doped Si(100) samples. Single contacts were always obtained once the smallest constriction of the structures was below the average grain size of the Ag films and competing thermal migration was suppressed. These ultra-thin and laterally open structures on Si provide complete accessibility for local characterisation of the molecular junction.By characterizing and manipulating the conductive properties of single Ag nano-grain boundaries with electromigration—originally considered only as a detrimental effect for metallic nanostructures—we show that atomic point contacts can be generated at well-defined locations with extreme reliability in ultra-thin (5 nm) and ultra-small (minimum width 16 nm) Ag nanostructures, deposited on hydrogen terminated low-doped Si(100) samples. Single contacts were always obtained once the smallest constriction of the structures was below the average grain size of the Ag films and competing thermal migration was suppressed. These ultra-thin and laterally open structures on Si provide complete accessibility for local characterisation of the molecular junction.