Nanoscale surface electrical properties of aluminum zinc oxide thin films investigated by scanning probe microscopy
Nanoscale surface electrical properties of aluminum zinc oxide thin films investigated by scanning probe microscopy
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DOI：
10.1063/1.3042237
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发表时间：
2008-12
影响因子：
3.2
通讯作者：
Sy-Hann Chen;Chang-Feng Yu;Yung-Shao Lin;Wenguang Xie;T. Hsu;D. Tsai
中科院分区：
文献类型：
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作者：
Sy-Hann Chen;Chang-Feng Yu;Yung-Shao Lin;Wenguang Xie;T. Hsu;D. Tsai
采用导电原子力显微镜和扫描表面电位显微镜研究了不同衬底温度下脉冲激光沉积(PLD)法制备的聚合物发光二极管(PLED)负极材料AZO薄膜的纳米级表面电学性质。实验结果表明，当衬底温度超过10 0℃时，薄膜的局部电导率和功函数与表面Al掺杂浓度和O2−浓度呈正相关。当衬底温度约为150℃时，AZO表面导电区覆盖率为90.20%，平均功函数为4.85 eV。此外，这两种微观均匀度都达到了PLEDs的标准。PLD的这种低温条件显著降低了在塑料衬底上进行AZO真空蒸发时的杂质成品率，支持AZO薄膜的各种应用。
Conducting atomic force microscopy and scanning surface potential microscopy were adopted to study the nanoscale surface electrical properties of aluminum zinc oxide (AZO) films that were prepared by pulsed laser deposition (PLD) at various substrate temperatures for use as anode materials in polymer light-emitting diodes (PLEDs). Experimental results indicate that when substrate temperatures exceed 100°C, the local conductivity and work function are positively correlated with the concentrations of Al dopant and O2− on AZO surface. When the substrate temperature is approximately 150°C, the percentage coverage of conducting regions of the AZO surface and the mean work function are 90.20% and 4.85eV, respectively. Additionally, both microcosmic uniformities meet the standard applied to PLEDs. This low-temperature condition for PLD significantly reduces the yield rate of impurities when AZO vacuum evaporation is performed on a plastic substrate, supporting various applications of AZO films.