Interplay between carrier and cationic defect concentration in ferromagnetism of anatase Ti1-xTaxO2 thin films
Interplay between carrier and cationic defect concentration in ferromagnetism of anatase Ti1-xTaxO2 thin films
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DOI：
10.1063/1.3690113
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发表时间：
2012-03-01
期刊：
影响因子：
1.6
通讯作者：
Venkatesan, T.
中科院分区：
文献类型：
--
作者：
Barman, A. Roy;Annadi, A.;Venkatesan, T.
在特定的生长条件下通过脉冲激光沉积生长的Ta掺入的TiO 2薄膜显示室温铁磁性。Ta引入载流子和伴随的阳离子缺陷，它们的组合导致铁磁性。在本文中，我们报告的载流子和阳离子缺陷密度（补偿）的依赖关系的各种参数，如氧生长压力，温度和Ta浓度。最有可能的是，Ti空位作为磁性中心，自由电子通过Ruderman-Kittel-Kasuya-Yosida机制帮助交换导致铁磁性。版权所有2012作者。本文是在知识共享署名3.0未移植许可证下发布的。[http：//dx.doi.org/10.1063/1.3690113]
Thin films of Ta incorporated TiO2 grown by pulsed laser deposition under specific growth conditions show room temperature ferromagnetism. Ta introduces carriers and concomitantly cationic defects, the combination of which leads to ferromagnetism. In this paper, we report on the dependence of the carrier and cationic defect density (compensation) on various parameters such as oxygen growth pressure, temperature and Ta concentration. Most likely, the Ti vacancies act as magnetic centers and the free electrons help with the exchange leading to ferromagnetism via Ruderman-Kittel-Kasuya-Yosida mechanism. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.3690113]