Determination of junction temperature in AlGaInP∕GaAs light emitting diodes by self-excited photoluminescence signal
Determination of junction temperature in AlGaInP∕GaAs light emitting diodes by self-excited photoluminescence signal
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DOI：
10.1063/1.2345587
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发表时间：
2006-09
影响因子：
4
通讯作者：
N. Chen;Y. N. Wang;C. Tseng;Y. K. Yang
中科院分区：
文献类型：
--
作者：
N. Chen;Y. N. Wang;C. Tseng;Y. K. Yang
采用有源层电致发光激发GaAs衬底的光致发光（PL）来确定AlGaInP ScinGaAs发光二极管的结温。基于GaAs的Varshni方程，用这种方法测量的温度与用发射峰能量漂移方法得到的温度是一致的。由于PL信号在衬底内产生，因此不需要依赖于器件结构的校准来确定器件的结温。
The photoluminescence (PL) of the GaAs substrate excited by the electroluminescence of the active layer is adopted to determine the junction temperature in AlGaInP∕GaAs light emitting diodes. Based on the Varshni equation for GaAs, the temperature measured by this approach is consistent with that obtained by the emission peak energy shift approach. As the PL signal is generated within the substrate, no calibration dependent on the device structure is necessary to determine the junction temperature of the device.