Enhanced ferroelectricity in Ti-doped multiferroic BiFeO3 thin films
Enhanced ferroelectricity in Ti-doped multiferroic BiFeO3 thin films
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增强钛掺杂多铁性 BiFeO3 薄膜的铁电性
DOI：
10.1063/1.2222242
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发表时间：
2006-07-31
影响因子：
4
通讯作者：
Nan, Ce-Wen
中科院分区：
文献类型：
--
作者：
Wang, Yao;Nan, Ce-Wen
采用溶胶-凝胶旋涂技术在(111)Pt/Ti/SiO2/Si基底上制备了Ti4+离子掺杂的BiFeO3薄膜。 X射线衍射和扫描电子显微镜分别显示出薄膜的单相以及良好的表面和横截面形貌。漏电流密度测量表明Ti4+掺杂提高了BiFeO3薄膜的质量。通过在溶胶-凝胶溶液处理的 BiFeO3 薄膜中引入少量 Ti 离子，与未掺杂的 BiFeO3 薄膜相比，掺杂 BiFeO3 薄膜的剩余极化和饱和极化均得到大幅增强，这是由于漏电流减少、Ti4+ 稳定了铁电畸变以及更均匀的微观结构。 (c) 2006 年美国物理研究所。
Ti4+ ion-doped BiFeO3 thin films were prepared by sol-gel spin-coating technique on (111)Pt/Ti/SiO2/Si substrates. X-ray diffraction and scanning electron microscope revealed the single phase, and good surface and cross-section morphologies of the films, respectively. Leakage current density measurement indicated that the quality of the BiFeO3 films was improved by Ti4+ doping. By introducing a small amount of Ti ions into the sol-gel solution-processed BiFeO3 films, large enhancement in both remnant and saturation polarizations of the doped-BiFeO3 films in comparisons with the undoped BiFeO3 films was observed, due to the reduced leakage current, stabilization of the ferroelectric distortion by Ti4+, and more homogenous microstructure. (c) 2006 American Institute of Physics.