Random Telegraph Noise after Hot Carrier Injection in Tri-gate Nanowire Transistor
Random Telegraph Noise after Hot Carrier Injection in Tri-gate Nanowire Transistor
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三栅纳米线晶体管热载流子注入后的随机电报噪声
DOI：
10.1109/edtm.2019.8731025
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Y. Mitani
中科院分区：
文献类型：
--
作者：
K. Ota;R. Ichihara;Masamichi Suzuki;M. Saitoh;Y. Mitani
针对 RTN 测量条件和 HCI 应力条件，研究了热载流子注入 (HCI) 后的随机电报噪声 (RTN)。 HCI 后观察到的 RTN 数量和幅度均增加。 HCI 之后的 RTN 显示 RTN 幅度大致与 HCI 的阈值电压偏移成正比。随着 HCI 注入载流子的增加，栅极氧化物会发生退化，引入陷阱位点，无论陷阱位置和反转载流子分布如何，都会产生更大的 RTN。同时，RTN 幅度与 HCI 造成的漏极电流衰减呈弱相关。高应力漏极电压导致的大漏极电流退化不仅是由阈值电压漂移引起的，而且是由迁移率退化引起的，迁移率退化对RTN幅度影响很小。
Random telegraph noise (RTN) after hot carrier injection (HCI) is studied with respect to RTN measurement conditions and HCI stress conditions. Both the number and amplitude of observed RTN increase after HCI. RTN after HCI shows that RTN amplitude is roughly proportional to the threshold voltage shift by HCI. As injected carrier by HCI increases, the degradation in gate oxide occurs introducing the trap sites which generate larger RTN regardless of the trap position and inversion carrier distribution. Meanwhile, RTN amplitude shows a weak correlation with drain current degradation by HCI. Large drain current degradation with high stress drain voltage is caused not only by threshold voltage shift but also by the mobility degradation which has a small impact on RTN amplitude.