Intrinsic characteristics of semiconducting oxide nanobelt field-effect transistors
Intrinsic characteristics of semiconducting oxide nanobelt field-effect transistors
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DOI：
10.1063/1.2338754
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发表时间：
2006-08-28
影响因子：
4
通讯作者：
Wang, Z. L.
中科院分区：
文献类型：
--
作者：
Cheng, Yi;Xiong, P.;Wang, Z. L.
场效应晶体管（FET）的基础上个别半导体氧化物（氧化锡和氧化锌）纳米带与多端电接触已被制造和表征。同时进行双端和四端测量，可将FET特性与触点性质直接关联。具有高电阻非欧姆接触的器件表现出肖特基势垒FET行为。相比之下，纳米带上的低电阻欧姆接触导致高性能n沟道耗尽型FET，其具有良好定义的线性和饱和状态、大的“导通”电流和高达10（7）的导通/关断比。这种器件的FET特性显示出在室温下通过0.2%H-2气流的显著修改。这些纳米带FET的优良的固有特性使它们成为基于沟道电导的场效应调制的纳米级生物和化学传感器的理想候选者。(c)2006年，美国物理学会。
Field-effect transistors (FETs) based on individual semiconducting oxide (SnO2 and ZnO) nanobelts with multiterminal electrical contacts have been fabricated and characterized. Simultaneous two-terminal and four-terminal measurements enable direct correlation of the FET characteristics with the nature of the contacts. Devices with high-resistance non-Ohmic contacts exhibit a Schottky barrier FET behavior. In contrast, low-resistance Ohmic contacts on the nanobelt lead to high-performance n-channel depletion mode FETs with well-defined linear and saturation regimes, large "on" current, and an on/off ratio as high as 10(7). The FET characteristics of such devices show a significant modification by a 0.2% H-2 gas flow at room temperature. The excellent intrinsic characteristics of these nanobelt FETs make them ideal candidates as nanoscale biological and chemical sensors based on field-effect modulation of the channel conductance. (c) 2006 American Institute of Physics.