T.YODO, H.Ando, H.Tsuchiya, D.Nosei, M.Shimeno and Y.Harada: "Influences of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE"Eleventh International Conference on
T.YODO, H.Ando, H.Tsuchiya, D.Nosei, M.Shimeno and Y.Harada: "Influences of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE"Eleventh International Conference on
复制标题
T.YODO、H.Ando、H.Tsuchiya、D.Nosei、M.Shimeno 和 Y.Harada:“生长前衬底氮化对在 Si(001) 和 Si(111) 上生长的 GaN 异质外延层的初始生长过程的影响
DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
中科院分区:
文献类型:
--
作者: