Energy Spectra of Electrons Backscattered from Sample Surfaces with Heterostructures using Field-Emission Scanning Tunneling Microscopy
Energy Spectra of Electrons Backscattered from Sample Surfaces with Heterostructures using Field-Emission Scanning Tunneling Microscopy
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DOI：
10.1143/jjap.45.2278
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发表时间：
2006-03
影响因子：
1.5
通讯作者：
M. Hirade;T. Arai;M. Tomitori
中科院分区：
文献类型：
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作者：
M. Hirade;T. Arai;M. Tomitori
改进了场发射扫描隧道显微镜（STM）与表面电子能谱相结合的仪器，可以直接识别样品上的原子种类；我们在尖端附近增加了一个电屏蔽，其位置可以通过三维粗级调整，并通过将STM头放置在旋转台上来优化样品表面相对于能量分析仪入口的掠掠角度。利用改进后的仪器观察了纯Si（111）和al沉积Si（111）的STM图像，并获取了背散射电子的能谱。Si（111）的硅LVV的俄歇峰位于样品顶端约1 μ m的分离处，而Al-沉积的硅样品的Al LVV和Si LVV峰则存在于不同的沉积量的Al-沉积的硅样品中。本研究表明，该组合仪器可用于异质结构样品的亚微米表面分析。
We have improved the combined instrument of field-emission scanning tunneling microscopy (STM) with surface electron spectroscopy to directly identify the atomic species on a sample; we supplement an electric shield near the tip, the position of which can be adjusted by three-dimensional coarse stages, and optimize the grazing angle of a sample surface with respect to the entrance of an energy analyzer by placing the STM head on a rotation stage. We observe STM images and take the energy spectra of backscattered electrons from clean Si(111) and Al-deposited Si(111) using the improved instrument. The Auger peaks of Si LVV are found at a tip–sample separation of approximately 1 µm for Si(111), and Al LVV and Si LVV peaks are found for Al-deposited Si samples, depending on the deposited amount. The present study implies that submicron surface analysis of samples with heterostructures can be performed with the combined instrument.