A significant shift of Schottky barrier heights at strongly pinned metal/germanium interface by inserting an ultra-thin insulating film
A significant shift of Schottky barrier heights at strongly pinned metal/germanium interface by inserting an ultra-thin insulating film
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DOI：
10.1143/apex.1.051406
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发表时间：
2008-05-01
影响因子：
2.3
通讯作者：
Toriumi, Akira
中科院分区：
文献类型：
--
作者：
Nishimura, Tomonori;Kita, Koji;Toriumi, Akira
任何金属/锗（Ge）界面，与n-Ge的肖特基结和与p-Ge的欧姆结都是由强费米能级钉住Ge的价带边缘形成的。在本文中，我们报告了通过在金属/锗界面中插入超薄氧化膜来逆转肖特基-欧姆特性。发现肖特基势垒高度随绝缘膜厚度的增加而逐渐变化，这支持了金属/锗结处费米能级钉钉的起源是由金属诱导的间隙态引起的。此外，SIBH的变化使我们能够在没有任何杂质掺杂的情况下操作金属源/漏极锗n沟道金属氧化物半导体场效应晶体管（n- mosfet）。我们展示了金属源极/漏极Ge n-MOSFET，其峰值迁移率为270 cm(2)/(v)。(c) 2008日本应用物理学会。
any metal/germanium (Ge) interfaces, Schottky junctions to n-Ge and ohmic ones to p-Ge are formed by the strong Fermi level pinning to the valence band edge of Ge. In this paper, we report that Schottky-ohmic characteristics are reversed by inserting an ultra-thin oxide film into the metal/Ge interface. A gradual change of Schottky barrier heights (SBHs) with increasing insulating film thickness has been found, which supports that the origin of Fermi level pinning at the metal/Ge junction is caused by the metal-induced gap states. Furthermore, the SIBH change enables us to operate metal source/drain Ge n-channel metal-oxide-semiconductor field effect transistors (n-MOSFETs) without any impurity doping. We demonstrate the metal source/drain Ge n-MOSFET with a peak mobility of 270 cm(2)/(V.s). (c) 2008 The Japan Society of Applied Physics.