Gold nanowire electrodes for flexible organic thin-film transistors
Gold nanowire electrodes for flexible organic thin-film transistors
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DOI：
10.35848/1882-0786/ac896a
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发表时间：
2022-09-01
影响因子：
2.3
通讯作者：
Sekitani, Tsuyoshi
中科院分区：
文献类型：
--
作者：
Takane, Satoshi;Noda, Yuki;Sekitani, Tsuyoshi
制造并表征了一种以金纳米线（AuNW）网络作为源/漏/栅电极的柔性有机薄膜晶体管（OTFT）（AuNW-OTFT）。它的制造是通过使用热压转移方法在柔性薄膜基板上成功形成 AuNW 网络电极而实现的。所制备的AuNW-OTFT表现出典型的p型特性（迁移率：6.0 x 10(-2) cm(2) V(-1)s(-1)，开/关比：10(5)），并且比具有相同配置的真空沉积Au电极的OTFT具有更低的接触电阻。此外，AuNW-OTFT 表现出高机械耐久性，弯曲前后（弯曲半径：0.8 mm）没有显着的特性变化就证明了这一点。
A flexible organic thin-film transistor (OTFT) with gold nanowire (AuNW) networks as source/drain/gate electrodes (AuNW-OTFT) was fabricated and characterized. Its fabrication was enabled by the successful formation of AuNW network electrodes on a flexible thin-film substrate using the thermal pressing transfer method. The fabricated AuNW-OTFT exhibited typical p-type characteristics (mobility: 6.0 x 10(-2) cm(2) V(-1 )s(-1), on/off ratio: 10(5)) and a lower contact resistance than that of an OTFT with vacuum-deposited Au electrodes in the same configuration. Furthermore, the AuNW-OTFT demonstrated high mechanical durability, as proven by the absence of significant characteristic changes before and after bending (bending radius:0.8 mm).