Transition from escaped to decomposed nematic defects, and vice versa
Transition from escaped to decomposed nematic defects, and vice versa
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DOI：
10.1039/d0sm00218f
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发表时间：
2020-05-28
期刊：
影响因子：
3.4
通讯作者：
Rosenblatt，Charles
中科院分区：
文献类型：
--
作者：
Susser，Adam L.;Harkai，Sasa;Rosenblatt，Charles
在阈值电场下，双折射液晶盒中的径向指向矢分布可以转变为一对强度m = +1/2的表面缺陷（及其相关的向错线）。类似地，半整数缺陷对可以在阈值电场下变换成逃逸到第三维中的指向矢分布。这些转变证明了实验和数值，并讨论了拓扑不连续和连续的路径，连接两个国家。此外，我们注意到，与m = +1/2表面缺陷相关的一对向错线被观察到在足够低的频率下对于足够大的电场围绕共同点共同旋转。
An escaped radial director profile in a nematic liquid crystal cell can be transformed into a pair of strength m = +1/2 surface defects (and their associated disclination lines) at a threshold electric field. Analogously, a half-integer defect pair can be transformed at a threshold electric field into a director profile that escapes into the third dimension. These transitions were demonstrated experimentally and numerically, and are discussed in terms of topologically discontinuous and continuous pathways that connect the two states. Additionally, we note that the pair of disclination lines associated with the m = +1/2 surface defects were observed to co-rotate around a common point for a sufficiently large electric field at a sufficiently low frequency.