Impurity-induced layer disordering of quantum-well heterostructures: discovery and prospects
Impurity-induced layer disordering of quantum-well heterostructures: discovery and prospects
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量子阱异质结构的杂质引起的层无序：发现和前景
DOI：
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发表时间：
1998
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影响因子：
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通讯作者：
J. Holonyak
中科院分区：
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作者：
J. Holonyak
本文叙述了1980年发现AlAs-GaAs（Al/sub x/Ga/sub 1-x/As）量子阱异质结构和超晶格的杂质诱导层无序的情况。鉴于QWH或SL（AlAs-GaAs）对普通热退火的极大稳定性，IILD令人惊讶，即，较低的温度（选择性）从红能隙QW晶体变化到黄能隙体晶。层无序化可以通过扩散或注入最有效地进行，使用双位点掺杂剂，例如Zn（受体）或Si（供体），但不限于单独的活性杂质。这种可掩蔽平面技术（具有晶体守恒）将较粗糙的分层III-V“合金”转变为较平滑的随机合金和较高的带隙，能够根据需要形成限制载流子和光子的区域。因此，IILD在光电子学（激光器、波导等）中具有广泛且不断增长的用途，特别是对于使用Al和Ga的III-V系统，Al和Ga容易彼此取代并且对IIILD敏感。扩散的原子重排，一个小尺度（微观）晶格变化，本质上是由IILD“放大”成一个大尺度（宏观）层的变化（图案化），提供了一种方法来研究III-V扩散机制。IILD是一种平面技术，工作领域不断发展，在光电子学应用以及III-V族和其他潜在晶体系统的基本扩散研究中非常有用。
The circumstances leading to the discovery in 1980 of impurity-induced layer disordering (IILD) of AlAs-GaAs (Al/sub x/Ga/sub 1-x/As) quantum-well heterostructures (QWHs) and superlattices (SLs) are described. In view of the great stability of a QWH or SL (AlAs-GaAs) against ordinary thermal annealing, IILD came as a surprise, i.e., the lower temperature (selective) change from red-gap QW crystal to yellow-gap bulk crystal. Layer disordering can be carried out most effectively, via diffusion or implantation, with two-site dopants such as Zn (acceptor) or Si (donor), but is not restricted to active impurities alone. This maskable planar technology, which (with crystal conservation) transforms a coarser layered III-V "alloy" to a smoother stochastic alloy, and higher bandgap, is capable of forming, as desired, regions that confine carriers and photons. Accordingly, IILD has broad and growing use in optoelectronics (lasers, waveguides, etc.), particularly for III-V systems employing Al and Ga which easily substitute for one another and are sensitive to IILD. The atomic rearrangement of diffusion, a small scale (microscopic) lattice change, is in essence "amplified" by IILD into a large scale (macroscopic) layer change (patterned) that provides a method to study III-V diffusion mechanisms. IILD, a planar technology and growing area of work, is useful in optoelectronics applications as well as for basic diffusion studies in III-Vs and potentially other crystal systems.