Yttrium passivation of defects in GeO2 and GeO2/Ge interfaces
Yttrium passivation of defects in GeO2 and GeO2/Ge interfaces
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DOI：
10.1063/1.4974291
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发表时间：
2017-01
影响因子：
4
通讯作者：
Hongfei Li;J. Robertson
中科院分区：
文献类型：
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作者：
Hongfei Li;J. Robertson
实验发现，非晶GeO2与Y2O3合金化可以改善其作为Ge基场效应晶体管栅极电介质的化学稳定性和电可靠性。在这里解释的机制的基础上密度泛函计算。的GeO2的可靠性问题与缺氧缺陷，产生的带隙状态附近的底层Ge的边缘。这些可以通过Y掺杂来钝化。这将缺陷隙态从差距上移到GeO 2导带中，从而有效地钝化GeO 2层中的隙态。
Alloying amorphous GeO2 with Y2O3 has been found experimentally to improve its chemical stability and electrical reliability as a gate dielectric in Ge-based field effect transistors. The mechanism is explained here based on density functional calculations. The GeO2 reliability problem is correlated with oxygen deficiency defects, which generate gap states near the band-edges of the underlying Ge. These can be passivated through Y doping. This shifts the defect gap state out of the gap up into the GeO2 conduction band, thus effectively passivating gap states in the GeO2 layer.