One-dimensional miniband formation in closely stacked InAs/GaAs quantum dots
One-dimensional miniband formation in closely stacked InAs/GaAs quantum dots
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DOI：
10.1103/physrevb.87.235323
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发表时间：
2013-06-27
影响因子：
3.7
通讯作者：
Yasuda, Hidehiro
中科院分区：
文献类型：
--
作者：
Takahashi, Akihiro;Ueda, Tatsuya;Yasuda, Hidehiro
我们利用线偏振光致发光（PL）和时间分辨PL测量研究了具有4.0 nm间隔层紧密堆叠的InAs/GaAs量子点（QDs）的电子态。随着堆叠层数（SLN）的增加，（001）平面的线极化各向异性增大；[-110]偏振分量占主导地位。这些依赖于sln的极化特性是由垂直耦合电子态引起的价带混合引起的。随着激发功率的增加，由于带填充，叠加量子点的PL谱表现出明显的蓝移。此外，发现辐射复合寿命服从T-1/2依赖关系，这直接证实了紧密堆叠量子点中激子的一维平动运动。
We have studied the electronic states of closely stacked InAs/GaAs quantum dots (QDs) with a 4.0-nm spacer layer using linearly polarized photoluminescence (PL) and time-resolved PL measurements. An increase in the stacking-layer number (SLN) leads to an increase in the linear polarization anisotropy in the (001) plane; the [-110]-polarization component becomes dominant. These SLN-dependent polarization characteristics result from the valence-band mixing induced by the vertically coupled electronic states. The PL spectrum of the stacked QDs shows clear blueshifts with an increase in the excitation power because of the band filling. In addition, the radiative recombination lifetime has been found to obey the T-1/2 dependence, which directly confirms the one-dimensional translational motion of excitons in the closely stacked QDs.