EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs (111)
EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs (111)
复制标题
立方 MnSb 在 GaAs 和 InGaAs 上的外延生长 (111)
DOI：
10.1142/s2010324714400256
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发表时间：
2015
期刊：
影响因子：
1.8
通讯作者：
BELL G
中科院分区：
文献类型：
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作者：
BELL G
二元过渡金属磷属元素化物（TMP）MnSb（c-MnSb）的立方多晶型物已被预测为具有少数自旋隙<1 eV的稳健的半金属铁磁（HMF）材料。在这里，MnSb外延生长的GaAs和In0.5Ga0.5As（111）衬底上的分子束外延（MBE）和分析使用同步辐射X射线衍射。我们发现MnSb的多晶型生长在两个基板上，其中c-MnSb与普通的镍钴酸盐n-MnSb多晶型物共存。c-MnSb在两种衬底上的晶粒尺寸均为数十纳米量级，并且其在MBE生长期间的出现与与GaAs（3.1%）和In0.5Ga0.5As（0.31%）衬底的非常不同的外延应变无关。
The cubic polymorph of the binary transition metal pnictide (TMP) MnSb, c-MnSb, has been predicted to be a robust half-metallic ferromagnetic (HMF) material with minority spin gap ≳1 eV. Here, MnSb epilayers are grown by molecular beam epitaxy (MBE) on GaAs and In0.5Ga0.5As(111) substrates and analyzed using synchrotron radiation X-ray diffraction. We find polymorphic growth of MnSb on both substrates, where c-MnSb co-exists with the ordinary niccolite n-MnSb polymorph. The grain size of the c-MnSb is of the order of tens of nanometer on both substrates and its appearance during MBE growth is independent of the very different epitaxial strain from the GaAs (3.1%) and In0.5Ga0.5As (0.31%) substrates.