Photoinduced inverse spin-Hall effect: Conversion of light-polarization information into electric voltage
Photoinduced inverse spin-Hall effect: Conversion of light-polarization information into electric voltage
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DOI：
10.1063/1.3327809
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发表时间：
2010-02-22
影响因子：
4
通讯作者：
Saitoh, E.
中科院分区：
文献类型：
--
作者：
Ando, K.;Morikawa, M.;Saitoh, E.
在Pt/GaAs混合结构中观察到了光致逆自旋霍尔效应。在GaAs层中，圆偏振光产生自旋极化载流子，通过界面将纯自旋电流引入Pt层。该纯自旋电流通过Pt层中的逆自旋霍尔效应被转换成电压。通过改变圆偏振光的方向和椭圆率，电动势系统地变化，与光致逆自旋霍尔效应的预测一致。观察到的现象允许圆偏振信息直接转换为电压;这种现象可以用作自旋光电探测器。
The photoinduced inverse spin-Hall effect was observed in a Pt/GaAs hybrid structure. In the GaAs layer, circularly polarized light generates spin-polarized carriers, inducing a pure spin current into the Pt layer through the interface. This pure spin current is, by the inverse spin-Hall effect in the Pt layer, converted into electric voltage. By changing the direction and ellipticity of the circularly polarized light, the electromotive force varies systematically, consistent with the prediction of the photoinduced inverse spin-Hall effect. The observed phenomenon allows the direct conversion of circular-polarization information into electric voltage; this phenomenon can be used as a spin photodetector.