Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires
Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires
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DOI：
10.1088/0957-4484/24/8/085603
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发表时间：
2013-03-01
期刊：
影响因子：
3.5
通讯作者：
Hardtdegen, H.
中科院分区：
文献类型：
--
作者：
Haas, F.;Sladek, K.;Hardtdegen, H.
本文报道了GaAs/InAs核壳结构纳米线的工艺和生长优化。采用金属有机气相外延技术(SA-MOVPE)在SiO_2掩蔽的GaAs衬底上选择性地生长了纳米线芯。((1)棒(1)上棒(1)棒(1)上棒)B模板。这些结构是通过一个完整的热纳米压印光刻工艺，这是详细介绍。通过扫描和透射电子显微镜研究了后续InAs壳层生长温度对壳层形貌和晶体结构的影响，以获得所需的均匀均匀的InAs外延生长。在最佳生长温度下，InAs壳层的形貌和晶体结构与衬底的GaAs芯相同，且完全均匀。
We report on the technology and growth optimization of GaAs/InAs core/shell nanowires. The GaAs nanowire cores were grown selectively by metal organic vapor phase epitaxy (SA-MOVPE) on SiO2 masked GaAs. ((1) over bar(1) over bar(1) over bar )B templates. These were structured by a complete thermal nanoimprint lithography process, which is presented in detail. The influence of the subsequent InAs shell growth temperature on the shell morphology and crystal structure was investigated by scanning and transmission electron microscopy in order to obtain the desired homogeneous and uniform InAs overgrowth. At the optimal growth temperature, the InAs shell adopted the morphology and crystal structure of the underlying GaAs core and was perfectly uniform.