A 624 V 5 A All-GaN Integrated Cascode for Power-Switching Applications
A 624 V 5 A All-GaN Integrated Cascode for Power-Switching Applications
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适用于电源开关应用的 624 V 5 A 全 GaN 集成共源共栅
DOI：
10.1002/pssa.201900783
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Jiang S
中科院分区：
文献类型：
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作者：
Jiang S
该器件的输出电流为5 A，阈值电压为+0.65 V，击穿电压为624 V。与商用的600 V GaN + Si混合共源共栅器件（TPH 3202）相比，在200 V和2.7 A下切换时，集成共源共栅器件的延迟时间显著缩短。这是由于没有Si金属氧化物半导体场效应晶体管（MOSFET）驱动器，导致输入电容小得多，如高压电容测量所示。此外，由于单片集成，集成共源共栅器件显示出降低的振铃效应。与商用600 V独立GaN器件（GS 66502 B和GS-065 - 004）相比，在低栅极驱动电流条件下切换时，集成共源共栅器件的米勒效应降低。结果证明了共源共栅器件在使用更便宜、更快和更高效的栅极驱动器以低栅极驱动电流进行开关方面的优势。
An all‐GaN integrated cascode device with an output current of 5 A, threshold voltage of +0.65 V and breakdown voltage of 624 V is demonstrated. Compared with the commercial 600 V hybrid GaN plus Si cascode device (TPH3202), the integrated cascode exhibits a significantly reduced delay time when switched at 200 V and 2.7 A. This is attributed to the absence of a Si metal–oxide–semiconductor field‐effect transistor (MOSFET) driver, leading to a much smaller input capacitance as indicated by the high voltage capacitance measurements. In addition, the integrated cascode device shows a reduced ringing effect due to monolithic integration. When compared with commercial 600 V standalone GaN devices (GS66502B and GS‐065‐004), a reduced Miller effect is observed for the integrated cascode when switched under low gate‐driving current conditions. The results demonstrate the advantages of the cascode device to switch with low gate‐driving current using cheaper, faster, and more efficient gate drivers.