Effects of LaNiO3 buffer layer on improving the dielectric properties of barium strontium titanate thin films on stainless steel substrates
Effects of LaNiO3 buffer layer on improving the dielectric properties of barium strontium titanate thin films on stainless steel substrates
复制标题
LaNiO3缓冲层对改善不锈钢基体钛酸锶钡薄膜介电性能的影响
DOI：
10.1007/s10971-016-4169-y
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发表时间：
2016-12-01
影响因子：
2.5
通讯作者：
Cheng, Jinrong
中科院分区：
文献类型：
--
作者：
Dong, Hanting;Lu, Guoping;Cheng, Jinrong
采用溶胶-凝胶法在不锈钢衬底上制备了钛酸锶钡（BST）薄膜，并在BST薄膜中引入了LaNiO 3（LNO）缓冲层。结果表明，通过引入LNO导电氧化层，BST薄膜的晶化温度从750 A ℃降低到720 A ℃。同时，由于SS是一种“压缩”衬底，BST薄膜所受的热应力得到了抑制。XRD和拉曼谱表明，在300 kV/cm的电场下，由于应变的减小，介电损耗显著降低，介电调谐率从24.0%提高到26.6%. LNO层也显著降低了BST薄膜的漏电流密度，并对其机理进行了分析。这些结果表明，这是值得引入LNO缓冲层的BST薄膜在金属衬底上，以改善其介电性能，通过减少失配应变，特别是对“压缩”衬底。[图片]
LaNiO3 (LNO) buffer layer was introduced into barium strontium titanate (BST) thin films deposited on stainless steel (SS) substrates by the sol-gel technique. Results show that the crystallization temperature of BST thin films is decreased from 750 to 720 A degrees C by introducing LNO conducting oxide layer. Simultaneously, the suffered thermal stress for BST films is depressed as SS is a "compressive" substrate. Furthermore, the dielectric loss is notably decreased especially at 10(3)-10(5) Hz, and the tunability is improved from 24.0 to 26.6 % under the field of 300 kV/cm, because the strain is reduced as characterized by the XRD and Raman spectra. The leakage current density of BST thin films is also significantly decreased by LNO layer, and its mechanism is analyzed. Such results imply that it is worthwhile to introduce LNO buffer layer for BST films on metal substrates to improve their dielectric properties by reducing the misfit strains, especially for "compressive" substrates.[GRAPHICS]