Tuning the Schottky Barrier Height at the Interfaces of Metals and Mixed Conductors
Tuning the Schottky Barrier Height at the Interfaces of Metals and Mixed Conductors
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DOI：
10.1021/acsami.0c18656
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发表时间：
2021-03-25
影响因子：
9.5
通讯作者：
Hitosugi, Taro
中科院分区：
文献类型：
--
作者：
Nishio, Kazunori;Shirasawa, Tetsuroh;Hitosugi, Taro
了解跨界面的电子和离子传输对于设计高性能的电子器件至关重要。功函数的调整是金属和半导体界面带对准的关键。然而，金属和混合导体界面上的电子结构，既传导电子又传导离子，仍然知之甚少。研究表明，在掺nb的SrTiO3金属和LiCoO2混合导体的界面上存在肖特基势垒，并且可以通过插入电偶极子层来调节界面电阻。在界面处插入1 nm厚的绝缘LaAlO3层后，界面电阻显著降低（降幅超过5个数量级）。我们将这些技术应用于固态锂电池，并证明了通过界面工程调整电子能带对准适用于金属和混合导体的界面。这些结果强调了设计高功率密度固态锂电池正极和集流器界面的重要性。
Understanding electronic and ionic transport across interfaces is crucial for designing high-performance electric devices. The adjustment of work functions is critical for band alignment at the interfaces of metals and semiconductors. However, the electronic structures at the interfaces of metals and mixed conductors, which conduct both electrons and ions, remain poorly understood. This study reveals that a Schottky barrier is present at the interface of the Nb-doped SrTiO3 metal and a LiCoO2 mixed conductor and that the interfacial resistance can be tuned by inserting an electric dipole layer. The interfacial resistance significantly decreased (by more than 5 orders of magnitude) upon the insertion of a 1 nm thick insulating LaAlO3 layer at the interface. We apply these techniques to solid-state lithium batteries and demonstrate that tuning the electronic energy band alignment by interfacial engineering is applicable to the interfaces of metals and mixed conductors. These results highlight the importance of designing positive electrode and current collector interfaces for solid-state lithium batteries with high power density.