Low-loss substrate for epitaxial growth of high-temperature superconductor
Low-loss substrate for epitaxial growth of high-temperature superconductor
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DOI：
10.1063/1.100543
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发表时间：
1988-12
影响因子：
4
通讯作者：
R. Simon;C. Platt;A. Lee;G. S. Lee;K. Daly;M. Wire;J. Luine;M. Urbanik
中科院分区：
文献类型：
--
作者：
R. Simon;C. Platt;A. Lee;G. S. Lee;K. Daly;M. Wire;J. Luine;M. Urbanik
研究了一种类钙钛矿单晶衬底材料，该材料同时允许外延生长1 - 2 - 3超导膜，并具有理想的低介电常数和损耗角正切的射频特性。3.792 A的晶格常数提供了在1 - 2 - 3的a轴的1%内的晶格匹配。在（100）LaAlO 3基片上制备的铒-钡-铜-氧化物溅射薄膜在90 K（ΔT= 1 K）下表现出尖锐的电阻转变，通过交流磁化率测量确定的体超导性，以及通过X射线衍射和高分辨率扫描电子显微镜证明的近单晶生长。在几个温度下实验研究了LaAlO 3的高频介电性能。测得的低频介电常数为15，微波损耗角正切范围从室温下的6×10−4到4 K下的5×10−6。
A perovskite‐like single‐crystal substrate material has been investigated that simultaneously permits epitaxial growth of 1‐2‐3 superconductor films and possesses desirable rf properties of low dielectric constant and loss tangent. The lattice constant of 3.792 A provides a lattice match to within 1% of the a axis of 1‐2‐3. Sputtered films of erbium‐barium‐copper‐oxide have been produced on (100) LaAlO3 substrates that exhibit sharp resistive transitions at 90 K (ΔT=1K), bulk superconductivity as determined by ac susceptibility measurements, and nearly single‐crystal growth as evidenced by x‐ray diffraction and high‐resolution scanning electron microscopy. The high‐frequency dielectric properties of LaAlO3 were experimentally investigated at several temperatures. The low‐frequency dielectric constant was measured to be 15 and the microwave loss tangent ranged from 6×10−4 at room temperature to 5×10−6 at 4 K.