X-ray diffraction study and semiconducting properties of the system Ga2Se3-In2Se3-猫眼课题宝

Ga2Se3-In2Se3体系的X射线衍射研究及半导体性能

DOI：

10.1002/pssa.2210410131

发表时间：

1977

期刊：

Physica Status Solidi (a)

影响因子：

--

通讯作者：

中科院分区：

--

文献类型：

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作者：

S. Popović;B. Čelustka;Ž. Ružić‐Toroš;D. Broz

采用x射线衍射方法研究了Ga2Se3与α-In2Se3 (R)之间固溶体形成的半导体合金的组织性能。在整个浓度范围内，四个不同的相在室温下是稳定的。在G2Se3的100%和大约75%（摩尔）范围内，存在的相是纯G2Se3本身的闪锌矿型，显示出一些模糊的衍射线。在G2Se3中，约88 - 55%存在一个称为γ - 2的相，而在G2Se3中，55% - 0.5%存在一个称为γ - 1的相，两者都与In2Se3的高温γ相相似。从G2Se3的2%到0%存在一个相，对应于In2Se3的室温α(R)相。在各相范围内，晶胞参数随成分的变化而不断变化，而在从一个相过渡到另一个相时，“推导”出的参数（分别对应于闪锌矿相晶胞表面对角线的一半和体对角线的三分之二）变化很小。该体系除α-In2Se3 (R)相具有较高的电导率外，其余相均具有约2ev的高隐能带半导体性质。其他性质从一个相改变到另一个相。

Structural properties of semiconductor alloys formed by solid solution between Ga2Se3 and α-In2Se3 (R) are studied by X-ray diffraction methods. In the whole range of concentrations four distinct phases are established stable at room temperature. Within 100% and approximately 75% (molar) of G2Se3 the existing phase is of zinc blende type as pure G2Se3 itself, showing some blurred diffraction lines. From approximately 88 to 55% of G2Se3 exists a phase designated as γ2, while from 55 up to 0.5% of G2Se3 a phase exists designated asγ1, both of them being similar to the high temperature, γ phase of In2Se3. From 2% to zero percent of G2Se3 exists a phase corresponding to the room temperature α(R) phase of In2Se3. The unit cell parameters continuously change with composition within the range of each phase, while at the transitions from one phase to the other “deduced” parameters (which correspond to one half of the face diagonal, and two thirds of body diagonal of the unit cell of zinc blende phase, respectively) change abruptly for little amounts. The system exhibits semiconducting properties in accordance with the high for bidden energy band of about 2 eV in all phases except that one corresponding to α-In2Se3 (R), in which the conductivity is high. The other properties change from one phase to the other. [Russian text Ignored]