Cleaved GaN facets by wafer fusion of GaN to InP
Cleaved GaN facets by wafer fusion of GaN to InP
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通过将 GaN 晶圆熔合到 InP 来切割 GaN 面
DOI：
10.1063/1.115613
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发表时间：
1996
影响因子：
4
通讯作者：
J. Speck
中科院分区：
文献类型：
--
作者：
R. K. Sink;S. Keller;B. Keller;D. Babic;A. Holmes;D. Kapolnek;S. Denbaars;J. Bowers;Xinru Wu;J. Speck
基底平面蓝宝石是GaN异质外延的常用衬底。这对解理面GaN激光器的制造提出了挑战，因为（0001）α-Al 2 O3中的自然解理面不垂直于晶片表面。这封信描述了一种通过晶片熔合实现垂直解理面的方法，该方法可能用于制造基于GaN的面内激光器。我们展示了成功的融合GaN到InP没有空隙或氧化物在界面处，并制造光学平坦的解理GaN小面，是平行于主机InP的晶面。在n-N融合界面上进行了I-V测量。这些结果表明，熔融结表现出几个电子伏特的势垒，电子从InP到GaN和欧姆传导的电子在相反的方向上移动。
Basal plane sapphire is a common substrate for the heteroepitaxy of GaN. This presents a challenge for fabrication of cleaved‐facet GaN lasers because the natural cleavage planes in (0001) α‐Al2O3 are not perpendicular to the wafer surface. This letter describes a method for achieving perpendicular cleaved facets through wafer fusion that can potentially be used to fabricate GaN based in‐plane lasers. We demonstrate successful fusion of GaN to InP without voids or oxide at the interface and fabricate optically flat cleaved GaN facets that are parallel to the crystallographic planes of the host InP. I–V measurements have been performed across the n‐N fused interface. These results show that the fused junction exhibits a barrier of several electron volts for electrons passing from the InP to the GaN and ohmic conduction of electrons moving in the opposite direction.