Effect of preparation conditions on pinhole defect of TiN films by ion mixing and vapor deposition
Effect of preparation conditions on pinhole defect of TiN films by ion mixing and vapor deposition
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DOI：
10.1016/s0042-207x(01)00471-7
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发表时间：
2002-05-27
期刊：
影响因子：
4
通讯作者：
Yamashita, M
中科院分区：
文献类型：
--
作者：
Uchida, H;Yamashita, M
在除氧0.5kmol/m(3) H2SO4 + 0.05 kmol/m(3) KSCN溶液中，对钛气相沉积、离子混合和气相沉积（IVD）技术中氮离子辐照制备的氮化钛（TiN）薄膜的针孔缺陷进行了电位动力学评价。近化学计量TiN薄膜呈柱状结构，晶体生长倾向于（i11）或（2 0 0）平面，并含有或多或少的针孔缺陷。TiN薄膜的临界钝化电流密度（CPCD） i（crit）随薄膜厚度和衬底温度的增加而减小。这里，针孔缺陷的面积比通过涂层与未涂层试样的i（crit）之比来评估，即采用CPCD方法。在电化学评价的基础上，探讨了耐蚀TiN膜的最佳制备条件。(C) 2002年Elsevier Science Ltd.出版
Pinhole defects of titanium nitride (TiN) films prepared by nitrogen ion irradiation during titanium vapor deposition, ion mixing and vapor deposition (IVD) technique, were evaluated potentiodynamically in a deaerated 0.5kmol/m(3) H2SO4 + 0.05 kmol/m(3) KSCN solution at 298 K. The nearly stoichiometric TiN films exhibited the columnar structure with the preferred crystal growth of (I 1 1) or (2 0 0) plane, and they contained more or less pinhole defects. The critical passivation current density (CPCD) i(crit) of TiN films decreased successfully with increasing film thickness and substrate temperature. Here, the area ratio of pinhole defects was evaluated by the ratio of i(crit) of coated and non-coated specimens, i.e., by CPCD method. Based on such electrochemical evaluation, the optimum preparation conditions for the corrosion-resistant TiN films were discussed. (C) 2002 Published by Elsevier Science Ltd.