DIELECTRIC-RELAXATION OF (BA,SR)TIO3 THIN-FILMS
DIELECTRIC-RELAXATION OF (BA,SR)TIO3 THIN-FILMS
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DOI：
10.1143/jjap.34.5478
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发表时间：
1995-09-01
期刊：
影响因子：
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通讯作者：
MIKAMI, N
中科院分区：
文献类型：
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作者：
HORIKAWA, T;MAKITA, T;MIKAMI, N
研究了高电阻率(Ba0.5Sr0.5)TiO3 薄膜的介电弛豫。该薄膜是在氩气和氧气气氛中通过射频磁控溅射方法沉积的。薄膜的介电色散在10(-2)-10(6) Hz的频率范围内测量。发现介电常数epsilon随频率略有下降，遵循类似于0.01epsilon的depsilon/d(log(10)f)关系，并且在测量的频率范围内介电损耗几乎恒定在小于1%。由于介电后效应，这种类型的介电弛豫会导致与时间成反比的吸收电流。在动态随机存取存储器 (DRAM) 操作中，介电弛豫将导致刷新周期期间存储电荷的损失小于 10%，并且薄膜的 DC 泄漏对器件操作的影响较小。
The dielectric relaxation of (Ba0.5Sr0.5)TiO3 thin films with high electric resistivity is investigated. The films are deposited by an rf-magnetron sputtering method in an atmosphere of argon and oxygen. The dielectric dispersion of the films is measured in the frequency range of 10(-2)-10(6) Hz. It is found that the dielectric constant epsilon slightly decreases with frequency, following the relationship of d epsilon/d(log(10)f)similar to-0.01 epsilon, and the dielecltric loss is almost constant at less than 1% in the measured frequency range. This type of dielectric relaxation causes absorption current which is inversely proportional to time, as the result of the dielectric aftereffect. In a dynamic random access memory (DRAM) operation, the dielectric relaxation would result in less than 10% loss of storage charge during the refresh cycle, and the film's DC leakage less affects the device operation.