Optical evidence of Stark effect in single-walled carbon nanotube transistors
Optical evidence of Stark effect in single-walled carbon nanotube transistors
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DOI：
10.1063/1.2425009
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发表时间：
2006-12
影响因子：
4
通讯作者：
T. Takenobu;Y. Murayama;Y. Iwasa
中科院分区：
文献类型：
--
作者：
T. Takenobu;Y. Murayama;Y. Iwasa
利用薄膜晶体管结构研究了外加电场对单壁碳纳米管的影响。在电场作用下，其光谱出现红移和展宽。这些现象提供了单壁碳纳米管中斯塔克效应的证据。斯塔克效应的发现表明了碳纳米管在光通信电光器件中的潜在用途。
The effect of an externally applied electric field in single-walled carbon nanotubes was studied using a thin-film transistor configuration. Under the electric field, the optical spectra displayed redshifts and broadening. These phenomena present evidence of the Stark effect in single-walled carbon nanotubes. The finding of the Stark effect suggests the potential use of carbon nanotubes in electro-optic devices for optical communication.