Design considerations of silicon avalanche cathodes
Design considerations of silicon avalanche cathodes
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DOI：
10.1116/1.586876
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发表时间：
1993-03
影响因子：
1.4
通讯作者：
M. Wang;Yicheng Lu;B. Lalevic
中科院分区：
文献类型：
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作者：
M. Wang;Yicheng Lu;B. Lalevic
采用超低p-n结的硅雪崩阴极已被用作真空微电子学中的电流源，并显示出良好的器件应用潜力。本文给出了同时求解泊松方程、电子连续性方程和空穴连续性方程的二维双载流子器件模拟程序的模拟结果。模拟包括杂质浓度和电场相关的迁移率模型、杂质浓度相关的Shockley-Read-Hall和Auger复合模型、禁带宽度变窄模型和碰撞电离模型。由于n型浅沟道的垂直尺寸较小，后续工艺步骤产生的非平面表面结构影响了器件的性能。模拟结果表明，我们的原型装置中存在电流拥挤的位置。为了获得最大的发射电流密度，在整个发射极区域获得均匀的发射是非常重要的。设计..。
Silicon avalanche cathodes using ultrashallow p–n junction have been used as a current source in vacuum microelectronics and have shown promising potential for device applications. In this article, device simulation results with a two‐dimensional, two‐carrier device modeling program which simultaneously solves Poisson’s and both the electron and hole continuity equations are presented. The simulation includes impurity concentration and electric field dependent mobility models, impurity concentration dependent Shockley–Read–Hall and Auger recombination, band gap narrowing, and impact ionization model. Due to the small vertical dimension of the n‐type shallow channel, the nonplanar surface structure resulting from subsequent processing steps influences the device performance. The simulation results indicate locations of current crowding in our prototype devices. In order to achieve maximum emission current density, it is very important to obtain a uniform emission across the entire emitter areas. The design...