Energy response of X-rays under high flux conditions using a thin APD for the energy range of 6?33 keV
Energy response of X-rays under high flux conditions using a thin APD for the energy range of 6?33 keV
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高通量条件下使用薄 APD 的 X 射线能量响应，能量范围为 6?33 keV
DOI：
10.1016/j.nima.2018.10.029
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Yoshimura K.
中科院分区：
文献类型：
--
作者：
Masuda T.;Hiraki T.;Kaino H.;Kishimoto S.;Miyamoto Y.;Okai K.;Okubo S.;Ozaki R.;Sasao N.;Suzuki K.;Uetake S.;Yoshimi A.;Yoshimura K.
本文报道了一种使用薄耗尽层硅雪崩光电二极管(硅雪崩光电二极管)的高速能量测量技术。为了在高速率条件下实现能量和定时的同时测量，研制了一种专用的幅度-时间转换器。利用入射能量为6~33keV的单色X射线束，系统地研究了该系统的能量响应。得到的能谱包含明显的峰和尾部分布。随着入射光子能量的增加，峰分数单调减小。这一现象可以通过考虑硅中能量沉积的分布来解释，这是用蒙特卡罗模拟来研究的。
This paper reports on the demonstration of a high-rate energy measurement technique using a thin depletion layer silicon avalanche photodiode (Si-APD). A dedicated amplitude-to-time converter is developed to realize simultaneous energy and timing measurement in a high rate condition. The energy response of the system is systematically studied by using monochromatic X-ray beam with an incident energy ranging from 6 to 33 keV. The obtained energy spectra contain clear peaks and tail distributions. The peak fraction monotonously decreases as the incident photon energy increases. This phenomenon can be explained by considering the distribution of the energy deposit in silicon, which is investigated by using a Monte Carlo simulation.