Charge Carrier Doping into the Peierls Insulator of the TCNQ Anion Radical Salt (TCNQ = 7,7,8,8-Tetracyanoquinodimethane)
Charge Carrier Doping into the Peierls Insulator of the TCNQ Anion Radical Salt (TCNQ = 7,7,8,8-Tetracyanoquinodimethane)
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电荷载流子掺杂到 TCNQ 阴离子自由基盐的 Peierls 绝缘体中 (TCNQ = 7,7,8,8-四氰基醌二甲烷)
DOI：
10.1021/acs.jpcc.6b02665
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发表时间：
2016
期刊：
影响因子：
3.7
通讯作者：
J. Harada and T. Inabe
中科院分区：
文献类型：
--
作者：
H. Kubota;Y. Takahashi;H. Hasegawa;T. Shimada;J. Harada and T. Inabe
采用F_4TCNQ（F_4TCNQ = 2，3，5，6-四氟-7，7，8，8-四氰基对苯醌二甲烷）晶体或粉末，通过接触掺杂法对具有分离的二聚体变形（Peierls态）TCNQ阴离子自由基柱的K-TCNQ（TCNQ = 7，7，8，8-四氰基对苯醌二甲烷）晶体进行了空穴掺杂。已经发现K-TCNQ表面的薄层电阻通过F4 TCNQ接触而降低。已经观察到在接触界面处K-F4 TCNQ纳米晶体的形成，但是导电AFM图像表明电流路径沿着空穴掺杂的K-TCNQ表面形成。有趣的是，空穴掺杂到K-TCNQ抑制相变的高温相（莫特绝缘体）。这被认为是由掺杂载流子的离域引起的能量增益引起的。
Hole-doping into K–TCNQ (TCNQ = 7,7,8,8-tetracyanoquinodimethane) crystals with segregated TCNQ anion radical columns with dimeric deformation (Peierls state) has been performed by a contact doping method using F4TCNQ (F4TCNQ = 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane) crystals or powder. The sheet resistance of the K–TCNQ surface has been found to decrease by the F4TCNQ contact. Formation of K–F4TCNQ nanocrystals at the contact interface has been observed, but conductive AFM images indicate that current paths form along the hole-doped K–TCNQ surface. Interestingly, hole-doping into K–TCNQ suppresses the phase transition to the high-temperature phase (Mott insulator). This is considered to result from the energy gain by the delocalization of the doped carriers.