Antiferromagnetic domain switching in Cr 2 O 3
Antiferromagnetic domain switching in Cr 2 O 3
复制标题
Cr 2 O 3 中的反铁磁畴转换
DOI：
10.1109/tmag.1966.1065857
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发表时间：
1966
影响因子：
2.1
通讯作者：
J. Anderson
中科院分区：
文献类型：
--
作者：
T. Martin;J. Anderson
在三氧化二铬单晶中观察到了受控的反铁磁畴反转现象。在电场和磁场分别约为10kV/cm和5kOe的同时，实现了基本上单一的域态之间的切换。开关能与两个开关场的乘积成正比，与理论相符。当外加能量降低甚至符号反转时，切换的磁畴状态是稳定的，直到它的值达到与第一阈值能量相同的数量级，在这一点，磁畴状态切换回来。对于晶体中每个方向的开关，已经检测到了几个截然不同的开关阈值。随着温度的降低，各阈值能量的大小迅速增加，但增加的速率不同。测量了该晶体中反铁磁畴反转的速度。根据分布在晶体中的种子区和钉扎中心讨论了开关行为。
Controlled antiferromagnetic domain reversals have been observed in single crystal Cr 2 O 3 . Switching between substantially single domain states has been achieved with the simultaneous impression of electric and magnetic fields of approximately 10 kV/cm and 5 kOe, respectively. The switching energy is closely proportional to the product of the two switching fields, in agreement with theory. The switched domain state was stable when the applied energy was reduced and even when reversed in sign, until its value reached the same order of magnitude as the first threshold energy, at which point the domain state switched back. Several widely different switching thresholds have been detected for switching in each direction in the crystal. The magnitudes of all the threshold energies increase rapidly but at different rates with decrease in temperature. The speed of antiferromagnetic domain reversal in this crystal has been measured. Switching behavior is discussed in terms of seed-domains and pinning centers distributed throughout the crystal.