Studies of proximity focusing RICH with an aerogel radiator using flat-panel multi-anode PMTs (Hamamatsu H8500)
Studies of proximity focusing RICH with an aerogel radiator using flat-panel multi-anode PMTs (Hamamatsu H8500)
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DOI：
10.1016/j.nima.2003.11.384
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发表时间：
2003-09
影响因子：
1.4
通讯作者：
T. Matsumoto;S. Korpar;I. Adachi;S. Fratina;T. Iijima;R. Ishibashi;H. Kawai;P. Križan;S. Ogawa;R. Pestotnik;S. Saitoh;T. Seki;T. Sumiyoshi;K. Suzuki;T. Tabata;Y. Uchida;Y. University;J. S. Institute;Ljubljana;Kek;Tsukuba;Nagoya University;C. University;T. University
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文献类型：
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作者：
T. Matsumoto;S. Korpar;I. Adachi;S. Fratina;T. Iijima;R. Ishibashi;H. Kawai;P. Križan;S. Ogawa;R. Pestotnik;S. Saitoh;T. Seki;T. Sumiyoshi;K. Suzuki;T. Tabata;Y. Uchida;Y. University;J. S. Institute;Ljubljana;Kek;Tsukuba;Nagoya University;C. University;T. University
为了对KEK-B工厂的贝儿探测器进行升级改造，研制了一种以气凝胶为辐射体的近贴聚焦环形成像切伦科夫探测器。我们使用一个4×4阵列的64通道平板多阳极光电倍增管（Hamamatsu H8500）构建了一个具有大有效面积的切伦科夫计数器原型。气凝胶样品用一种新技术制成，以在高折射率（n=1.05）下获得更高的透射长度。多通道光电倍增管的读出与模拟存储器芯片。2002年11月在KEK-PS π2光束线上进行了测试。为了系统地评估探测器的性能，使用动量在0.5和4 GeV /c之间的π介子束对各种气凝胶样品进行了测试。典型的角分辨率约为14 mrad，检测到的光电子平均数约为6。我们期望在4GeV/c的能量下，π介子和K介子能在4σ能级上分离.
A proximity focusing ring imaging Cherenkov detector using aerogel as the radiator has been studied for upgrading the Belle detector at the KEK-B-factory. We constructed a prototype Cherenkov counter using a 4×4 array of 64-channel flat-panel multi-anode PMTs (Hamamatsu H8500) with a large effective area. The aerogel samples were made with a new technique to obtain a higher transmission length at a high refractive index (n=1.05). Multi-channel PMTs are read-out with analog memory chips. The detector was tested at the KEK-PS π2 beam line in November, 2002. To evaluate systematically the performance of the detector, tests were carried out with various aerogel samples using pion beams with momenta between 0.5 and 4 GeV /c . The typical angular resolution was around 14 mrad , and the average number of detected photoelectrons was around 6. We expect that pions and kaons can be separated at a 4σ level at 4 GeV /c .